中国科学院长春应化所霍红团队报道了P3HT超薄膜中表面诱导微观结构和性能变化。相关研究成果于2024年4月16日发表在国际知名学术期刊《中国高分子科学杂志》。

该文中，研究人员通过在玻璃、硅晶片和氧化铟锡（ITO）衬底上旋涂稀释的P₃HT溶液（在体积比为80:20的甲苯：邻二氯苯（Tol:ODCB）混合物中），并添加成核剂双环[2.2.1]庚烷-2，3-二羧酸二钠盐（HPN-68L），制备了聚（3-己基噻吩）（P3HT-T）超薄膜。

通过研究P3HT-T超薄薄膜的电学和力学性能，研究人员发现与在同一基板上的相应原始P3HT薄膜（P3HT-0，无超声和成核剂）相比，无论使用何种基板，其电导率和裂纹起始应变（COS）都同时得到了改善。此外，P3HT-T超薄薄膜在不同衬底上的电导率相似（从3.7S·cm^-1变化到4.4S·cm^-1），但通过将衬底从Si晶片变为ITO，COS从97%增加到138%。

结合掠入射广角X射线衍射（GIXRD）、紫外-可见光谱（UV-Vis）和原子力显微镜（AFM），研究人员发现P3HT-T超薄薄膜在Si晶片上的固体有序度和结晶度最高，其次是在玻璃上，在ITO上的固体序度和结晶率要低得多。最后，研究了三种衬底的表面能和粗糙度，发现表面能的极性成分γp对不同衬底上，P3HT超薄薄膜的晶体微观结构起着关键作用。

该工作表明，当选择合适的衬底时，P3HT超薄膜可以明显提高拉伸性，同时保持相似的电学性能。这些发现为可拉伸CP超薄膜的研究提供了新的方向，以促进未来的实际应用。

附：英文原文

Title: Surface-induced Microstructure and Performance Changes in P3HT Ultrathin Films

Author: Hong-Tao Shan, Jia-Xin He, Bing-Yan Zhu, Xue-Ting Cao, Ying-Ying Yan, Jian-Jun Zhou, Hong Huo

Issue&Volume: 2024-04-16

Abstract: In this work, poly(3-hexylthiophene) (P3HT) ultrathin films (P3HT-T) were prepared by spin-coating a dilute P3HT solution (in a toluene: o-dichlorobenzene (Tol:ODCB) blend with a volume ratio of 80:20) with ultrasonication and the addition of the nucleating agent bicycle [2.2.1] heptane-2,3-dicarboxylic acid disodium salt (HPN-68L) on glass, Si wafers and indium tin oxide (ITO) substrates. The electrical and mechanical properties of the P3HT-T ultrathin films were investigated, and it was found that the conductivity and crack onset strain (COS) were simultaneously improved in comparison with those of the corresponding pristine P3HT film (P3HT-0, without ultrasonication and nucleating agent) on the same substrate, regardless of what substrate was used. Moreover, the conductivity of P3HT-T ultrathin films on different substrates was similar (varying from 3.7 S·cm1 to 4.4 S·cm1), yet the COS increased from 97% to 138% by varying the substrate from a Si wafer to ITO. Combining grazing-incidence wide-angle X-ray diffraction (GIXRD), UV-visible (UV-Vis) spectroscopy and atomic force microscopy (AFM), we found that the solid order and crystallinity of the P3HT-T ultrathin film on the Si wafer are highest, followed by those on glass, and much lower on ITO. Finally, the surface energy and roughness of three substrates were investigated, and it was found that the polar component of the surface energy γp plays a critical role in determining the crystalline microstructures of P3HT ultrathin films on different substrates. Our work indicates that the P3HT ultrathin film can obviously improve the stretchability and simultaneously retain similar electrical performance when a suitable substrate is chosen. These findings offer a new direction for research on stretchable CP ultrathin films to facilitate future practical applications.

DOI: 10.1007/s10118-024-3117-5

Source: https://www.cjps.org/en/article/doi/10.1007/s10118-024-3117-5/