近日，比利时微电子研究中心的Joris Van Campenhout&Bernardette Kunert及其研究团队取得一项新进展。他们在300毫米CMOS中试线上完全制造出砷化镓纳米脊激光二极管。相关研究成果已于2025年1月1日发在国际权威学术期刊《自然》上发表。

本文报道了一种基于新集成方法——纳米脊工程的电驱动砷化镓（GaAs）基激光二极管，该二极管完全在300毫米硅晶圆上的互补金属氧化物半导体（CMOS）试点生产线上制造。在晶圆尺度上，高质量地生长了嵌有p-i-n二极管和铟镓砷（InGaAs）量子阱的GaAs纳米脊波导。

在晶圆上的300多个器件中，实现了波长约为1020纳米的室温连续波激射，阈值电流低至5毫安，输出功率超过1毫瓦，激光线宽窄至46兆赫，且激光工作温度高达55摄氏度。这些结果展示了III-V/Si纳米脊工程概念在硅光子平台上单片集成激光二极管的潜力，为未来光学传感、互连等领域的大规模、成本敏感型应用提供了可能。

据悉，硅光子技术是一种迅速发展的技术，有望彻底改变通信、计算和感知世界的方式。然而，缺乏高度可扩展、原生且与互补金属氧化物半导体（CMOS）集成的光源，是阻碍其广泛应用的主要因素之一。尽管在硅上混合和异质集成III-V族光源方面已取得显著进展，但通过III-V族材料的直接外延生长实现单片集成，仍然是成本效益最高的片上光源解决方案。

附：英文原文

Title: GaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line

Author: De Koninck, Yannick, Caer, Charles, Yudistira, Didit, Baryshnikova, Marina, Sar, Huseyin, Hsieh, Ping-Yi, zdemir, Cenk Ibrahim, Patra, Saroj Kanta, Kuznetsova, Nadezda, Colucci, Davide, Milenin, Alexey, Yimam, Andualem Ali, Morthier, Geert, Van Thourhout, Dries, Verheyen, Peter, Pantouvaki, Marianna, Kunert, Bernardette, Van Campenhout, Joris

Issue&Volume: 2025-01-01

Abstract: Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal–oxide–semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III–V light sources on silicon, monolithic integration by direct epitaxy of III–V materials remains the pinnacle of cost-effective on-chip light sources. Here we report the electrically driven gallium arsenide (GaAs)-based laser diodes fully fabricated on 300-mm Si wafers in a CMOS pilot manufacturing line based on a new integration approach, nano-ridge engineering. GaAs nano-ridge waveguides with embedded p–i–n diodes and InGaAs quantum wells are grown at high quality on a wafer scale. Room-temperature continuous-wave lasing is demonstrated at wavelengths around 1,020nm in more than 300 devices across a wafer, with threshold currents as low as 5mA, output powers beyond 1mW, laser linewidths down to 46MHz and laser operation up to 55°C. These results illustrate the potential of the III–V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.

DOI: 10.1038/s41586-024-08364-2

Source: https://www.nature.com/articles/s41586-024-08364-2